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SI2319DDS-T1-GE3 +BOM

Small Signal Field-Effect Transistor, 3.6A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

SI2319DDS-T1-GE3 Information

Description

The SI2319DDS-T1-GE3 is a P-channel MOSFET transistor from Vishay Siliconix, designed for power management applications. It features a compact SOT-23 package, low on-resistance, and high efficiency, making it suitable for portable electronics, automotive electronics, and other power-sensitive devices requiring precise voltage control. This device offers advanced technology for high-frequency switching, with a VDS rating up to -20V for reliable performance. Its fast switching speed and reduced rise and fall times minimize electromagnetic interference (EMI). The SI2319DDS-T1-GE3 is commonly used in DC-DC converters, voltage regulators, and battery management systems. In summary, the SI2319DDS-T1-GE3 is a compact P-channel MOSFET transistor designed for power management applications, offering high efficiency, low on-resistance, and precise voltage control.

Features

According to the product information, the features of SI2319DDS-T1-GE3 are:

  • Compact design for space-saving applications
  • RDS(on) reduced for efficient power management
  • VDS rating up to -20V for reliable performance
  • Advanced technology for high-frequency switching
  • Low on-resistance for improved efficiency
  • P-channel MOSFET for precise control
  • Compact SOT-23 package for space-saving design
  • Fast switching speed for efficient energy transfer
  • Rise and fall times reduced for low EMI
  • Voltage rating up to -20V for reliable performance

These features make it suitable for power management applications, such as DC-DC converters, voltage regulators, and battery management systems.

Package

The package type of the SI2319DDS-T1-GE3 is TO-236-3, also known as SC-59 or SOT-23-3. This is a compact package designed for small signal MOSFET transistors.

Pinout

According to the product information, the SI2319DDS-T1-GE3 has a 3-Pin SOT-23 package.

The pinout is not explicitly mentioned in the provided data, but it's typically associated with the following functions:

  • Drain (D)
  • Source (S)
  • Gate (G)

Please note that this information may not be exhaustive, and I do not know the exact pinout or function of each pin without additional specification from Vishay.

Manufacturer

The manufacturer of the SI2319DDS-T1-GE3 is Vishay. Vishay is a leading global manufacturer of electronic components, including semiconductors, passive components, and sensors. They are known for their wide range of products, including MOSFETs, diodes, resistors, capacitors, and more.

Applications

The application areas of SI2319DDS-T1-GE3 are:

  • Power management applications (DC-DC converters, voltage regulators, battery management systems)
  • Portable electronics
  • Automotive electronics
  • Other power-sensitive devices requiring precise voltage control

Equivalent

Based on the product information, some equivalent products to SI2319DDS-T1-GE3 may include:

  • NXP PCA9305
  • STMicroelectronics VNH5019A
  • Texas Instruments TPH6002D
  • ON Semiconductor NCP1406P4

Please note that these are just potential equivalents and not an exhaustive list.

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 68 Weeks
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 3.6 A Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 43 pF
JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 1.7 W
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case SOT-23-3

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