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See Technical Specifications

SFH313 +BOM

Phototransistors

Manufacturer:

Osram Opto Semiconductors GmbH
Mfr.Part #:

SFH313
Datasheet:

SFH313 Datasheet (PDF)
Peak Wavelength:

850 nm
Maximum On-State Collector Current:

50 mA
Collector- Emitter Voltage VCEO Max:

70 V
Dark Current:

200 nA

SFH313 Information

General Description

The SFH313 phototransistor is an offering from ams OSRAM, a leading manufacturer of optoelectronics products. This phototransistor is designed for high-speed optical detection applications. The device features a peak wavelength of 850 nm and provides reliable switching performance with a maximum on-state collector current of up to 50 mA. With a low dark current of just 200 nA, the SFH313 is suitable for a wide range of applications requiring precise control over light levels. Its compact T-1 3/4 package makes it an ideal choice for space-constrained designs. The SFH313 phototransistor offers several advantages, including its high sensitivity and fast switching time. It is designed to withstand operating temperatures ranging from -40°C to +100°C, making it suitable for use in a wide range of environments. When using the SFH313 phototransistor, please note that it is sensitive to electromagnetic interference (EMI). Additionally, the device should be handled and stored in a controlled environment to prevent damage. Further instructions can be found in the product datasheet.

Key Features

Peak wavelength: 850 nm
Maximum on-state collector current: 50 mA
Collector-Emitter voltage VCEO max: 70 V
Dark current: 200 nA
Power dissipation (Pd): 200 mW
Minimum operating temperature: -40°C
Maximum operating temperature: +100°C

Application

High-speed optical detection
Control systems
Industrial automation
Medical devices
Consumer electronics

Specifications

Product Category	Phototransistors	Peak Wavelength	850 nm
Maximum On-State Collector Current	50 mA	Collector- Emitter Voltage VCEO Max	70 V
Dark Current	200 nA	Pd - Power Dissipation	200 mW
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 100 C
Half Intensity Angle Degrees	10 deg	Height	9 mm
Length	5.9 mm	Product Type	Phototransistors
Subcategory	Optical Detectors & Sensors	Type	Chip
Wavelength	850 nm	Width	5.9 mm
Package/Case	T-1 3/4