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SCTWA90N65G2V +BOM

High-power SiC MOSFET for industrial applications (64)

  • Manufacturer:

    STMicroelectronics NV

  • Mfr.Part #:

    SCTWA90N65G2V

  • Datasheet:

    SCTWA90N65G2V Datasheet (PDF) pdf-icon

  • ECCN US:

    EAR99

  • ECCN EU:

    NEC

  • Packing Type:

    Tube

  • Grade:

    Industrial

SCTWA90N65G2V Information

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key Features

  • High speed switching performance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances

Specifications

ECCN US EAR99 ECCN EU NEC
Packing Type Tube Grade Industrial
Package/Case HIP247 long leads

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