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S29GL512T10TFI010 +BOM

512Mb Flash Memory

S29GL512T10TFI010 Information

Description

The S29GL512T10TFI010 is a NAND Flash memory chip from Infineon, offering 256Mb of storage capacity, organized into 64 sectors. This chip features a top boot block architecture, allowing for sector erase and embedded error detection. With a supply voltage of 3V, operating speed of 10ns, and industrial temperature range (-40°C to +85°C), this chip is suitable for various applications such as embedded systems, automotive electronics, and more. Its notable features include 10,000 program/erase cycles endurance, 100-year data retention, and multiple 16-bit word programming capability. This NAND Flash memory chip is designed for use in industrial control systems, networking equipment, telecommunication devices, medical devices, gaming consoles, security systems, consumer electronics, and aerospace and defense systems.

Package

The package type of S29GL512T10TFI010 is TSOP-56.

Manufacturer

The manufacturer of the S29GL512T10TFI010 is Infineon Technologies, a German-based semiconductor company that specializes in microelectronics and system solutions for automotive, industrial, and consumer applications.

Applications

The application areas of S29GL512T10TFI010 are: Embedded systems, Automotive electronics, Industrial control systems, Networking equipment, Telecommunication devices, Medical devices, Gaming consoles, Security systems, Consumer electronics, Aerospace and defense systems.

Equivalent

Based on the product features and specifications, equivalent products to S29GL512T10TFI010 could be:

  • Micron's NAND flash memory chips (e.g., MT29F512GAWP)
  • Samsung's NAND flash memory chips (e.g., K9HAG512WMC)
  • Western Digital's NAND flash memory chips (e.g., WD128GV3L)

These products possess similar characteristics such as 512MB capacity, industrial temperature range, and high endurance. However, please note that the exact equivalent product may depend on specific application requirements.

Specifications

Category Integrated Circuits (ICs)MemoryMemory Series GL-T
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NOR Memory Size 512Mbit
Memory Organization 64M x 8 Memory Interface Parallel
Write Cycle Time - Word, Page 60ns Access Time 100 ns
Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount Base Product Number S29GL512
RHoS yes PBFree yes
HalogenFree yes feature-organization
feature-minimum-operating-supply-voltage-v 2.7 feature-maximum-access-time-ns 100
feature-process-technology 45nm, MirrorBit feature-maximum-operating-supply-voltage-v 3.6
feature-maximum-operating-current-ma 60 feature-packaging Tray
feature-rad-hard feature-pin-count 56
feature-cecc-qualified No feature-esd-protection
feature-military No feature-aec-qualified No
feature-aec-qualified-number feature-auto-motive No
feature-p-pap No feature-eccn-code 3A991b.1.a.
feature-svhc No feature-svhc-exceeds-threshold No
Package/Case TSOP56

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Ratings and Reviews

More
I
I**a 12/25/2022

It's okay. I am satisfied with the goods and the seller. Seller thanks and 5 stars.

1
J
J**s 10/20/2022

Delivery to mo, 5 days. Track is not tracked. I expected a little more, but everything corresponds to the description.

6
A
A**n 12/29/2021

Product 5 * recommend!

18
C
C**r 12/11/2021

Product came quickly, review and work see on radioremont channel.

17

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