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RGSX5TS65EGC11 Image
RGSX5TS65EGC11 Image
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RGSX5TS65EGC11

In Stock: 3,728

Ideal for UPS, welder and power conditioner systems to ensure stability

RGSX5TS65EGC11 Information

ROHM Semiconductor Inventory

Features

  • Low Collector - Emitter Saturation Voltage
  • Short Circuit Withstand Time 8μs
  • Built in Very Fast & Soft Recovery FRD
  • Pb - free Lead Plating ; RoHS Compliant

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.7 V
Maximum Gate Emitter Voltage - 30 V, 30 V Continuous Collector Current at 25 C 114 A
Pd - Power Dissipation 404 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Gate-Emitter Leakage Current 200 nA
Product Type IGBT Transistors Factory Pack Quantity 30
Subcategory IGBTs Part # Aliases RGSX5TS65E
Package/Case TO-247-3

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