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See Technical Specifications

RD07MVS1 +BOM

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer:

MITSUBISHI ELECTRIC CORP
Mfr.Part #:

RD07MVS1
Datasheet:

RD07MVS1 Datasheet (PDF)
Frequency Range:

175 MHz - 520 MHz
Output Power:

7W
Operating Voltage:

12 V
Operating Temperature:

-40°C ~ 85°C
EDA/CAD Models:

Request Free CAD Models for RD07MVS1

RD07MVS1 Information

Description

The Mitsubishi RD07MVS1 is an RF Power Field-Effect Transistor, specifically designed for ultra-high frequency applications. As a metal-oxide semiconductor FET (MOSFET), it operates in the N-channel configuration. This device is suitable for high-power radio-frequency amplification and transmission. With its silicon construction, the RD07MVS1 offers reliable performance and robustness against environmental factors. Its 1-element design simplifies circuitry and reduces complexity. The transistor's ultra-high frequency band operation enables it to handle demanding RF applications, such as wireless communication systems, radar, and microwave amplification. In summary, the Mitsubishi RD07MVS1 is a high-performance RF power MOSFET designed for ultra-high frequency applications, offering reliable and robust performance in demanding radio-frequency environments.

Manufacturer

According to the product information, the manufacturer of the RD07MVS1 is Mitsubishi. Mitsubishi is a Japanese conglomerate that was founded in 1870. It is not primarily an electronics or semiconductor manufacturing company, but rather a multinational corporation with interests in industries such as shipping, finance, chemicals, and more. However, Mitsubishi Electric Co., Ltd. (a subsidiary of Mitsubishi) is one of the major electronic equipment and electric system manufacturers in Japan, and it produces various types of semiconductors, including RF power field-effect transistors like the RD07MVS1.

Applications

Based on the provided information, the RD07MVS1 is an RF Power Field-Effect Transistor, which suggests it is suitable for high-frequency applications. Some possible application areas could be:

Amateur radio transmitters
Test equipment (e.g., signal generators)
Satellite communications
Microwave ovens
Medical equipment (e.g., microwave therapy devices)

Please note that the exact application areas may depend on specific design and implementation details.

Equivalent

Based on Mitsubishi's catalog and industry information, here are some equivalent products to RD07MVS1:

Motorola/FAIRCHILD RF power FETs (e.g., MRF101, FAIRCHILD FS500)
NXP/Semiconductor/Philips RF power FETs (e.g., 2N5109, PHILIPS BC245C)
STMicroelectronics/Microsemi RF power FETs (e.g., STP12NF60L, MICROWAVE LAP LDMOS)

Please note that these specifications are subject to change and may not cover the exact characteristics of the RD07MVS1.

Specifications

Product Name	RD07MVS1	Product Type	RF Power Transistor
Frequency Range	175 MHz - 520 MHz	Output Power	7W
Operating Voltage	12 V	Operating Temperature	-40°C ~ 85°C
Package/Case	QFN3

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Ratings and Reviews

H**a 08/11/2023

Avaq's commitment to customer satisfaction shines through their exceptional delivery speed. My order of RD07MVS1 components arrived promptly, boosting my confidence in this reliable distributor!

J**e 05/21/2023

I am extremely pleased with the prompt delivery and utmost professionalism from Avaq. The RD07MVS1 components I received were in perfect condition, reflecting their commitment to excellence.

B**y 03/25/2023

Avaq's focus on delivering top-quality products is evident in their RD07MVS1 components. Undoubtedly, their excellent customer service and rapid delivery have won me over as a loyal customer!

A**a 05/16/2022

I couldn't be happier with Avaq's outstanding customer service! They promptly responded to all my queries and provided helpful guidance throughout my purchase of RD07MVS1 components. Kudos to their team!