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RBN50H65T1FPQ-A0#CB0 +BOM

650V blocking voltage for maximum device protection.

RBN50H65T1FPQ-A0#CB0 Information

Key Features

  • Trench gate and thin wafer technology (G8H series)
  • Built in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
  • Quality grade: Standard
  • High-Speed switching
  • Non-specification for short circuit
  • Applications: UPS, Welding, photovoltaic inverters, Power converter system

Specifications

Pkg. Type TO-247A Carrier Type Tube
Package/Case TO-247-3

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