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R6015ANX +BOM

N-channel 600V 15A Transistor with TO-220FM Package

R6015ANX Information

Description

The ROHM Semicon R6015ANX is an N-Channel Power MOSFET, featuring a voltage rating of 600V, an operating current of 15A (Tc), and a maximum power dissipation of 77W (Tc) in the TO-220FM package. This device is designed for through-hole assembly applications. The R6015ANX is suitable for general-purpose digital or analog electronics, providing efficient switching and amplification capabilities while offering low internal resistance and high surge withstand voltage.

Package

The package type of R6015ANX is TO-220FM.

Pinout

Based on the information provided, the ROHM Semicon R6015ANX is an N-Channel Power MOSFET.

The pin count for this component is 3:

  • Drain (D)
  • Source (S)
  • Gate (G)
  • The function of each pin is as follows:

  • Drain (D): This is the high-side terminal, connected to the load or output.
  • Source (S): This is the low-side terminal, connected to the input or power source.
  • Gate (G): This is the control terminal, used to turn the MOSFET on and off.

Please note that this information is based on general knowledge of Power MOSFETs and may not be specific to the R6015ANX component.

Manufacturer

The manufacturer of the R6015ANX is ROHM Semicon. ROHM Semicon is a Japanese semiconductor manufacturer that specializes in designing, manufacturing, and selling semiconductors, including power devices, memory chips, and other electronic components.

Applications

The ROHM Semicon R6015ANX N-Channel Power MOSFET is suitable for various applications, including:

  • DC-DC converters
  • Motor drives
  • Power supplies
  • Audio equipment
  • Industrial control systems

Its high voltage rating (600V) and current handling capacity (15A) make it a reliable choice for demanding power management tasks.

Equivalent

Based on the product information, ROHM Semicon's R6015ANX is an N-Channel Power MOSFET with a voltage rating of 600V and current rating of 15A. Equivalent products may include:

  • STP16NF60
  • IRF640
  • FQP6N60C

Please note that equivalent products may vary depending on the specific application and requirements.

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 15 A
Rds On - Drain-Source Resistance 300 mOhms Maximum Operating Temperature + 150 C
Pd - Power Dissipation 50 W Forward Transconductance - Min 4.5 S
Product Type MOSFET Factory Pack Quantity 500
Subcategory MOSFETs Unit Weight 0.068784 oz
Package/Case TO-220FP-3

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