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See Technical Specifications

R1EV58064BDARBI#B0 +BOM

EEPROM

Manufacturer:

Renesas Electronics
Mfr.Part #:

R1EV58064BDARBI#B0
Datasheet:

R1EV58064BDARBI#B0 Datasheet (PDF)
Series:

RL78/G14
Height:

5.7 mm
Length:

35.6 mm
Width:

13.4 mm

R1EV58064BDARBI#B0 Information

General Description

For customers looking to optimize write operations, the R1EV58064BxxN and R1EV58064BxxR series EEPROMs feature a 64-byte page programming function, enabling faster write operations and streamlining overall system performance. Renesas Electronics provides limited support exclusively to customers who have adopted these highly innovative products

Key Features

Single supply: 2.7 to 5.5 V
Access time: 100 ns (max) at 2.7 V ≤ V_CC < 4.5 V 70 ns (max) at 4.5 V ≤ V_CC ≤ 5.5 V
Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 μW (max)
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (64 bytes): 10 ms (max)
Ready/Busy
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MONOS cell technology
105 or more erase /write cycles
10 or more years data retention
Software data protection
Write protection by RES pin (only the R1EV58064BxxR series)
Temperature range: -40 to +85°C
There are lead free products.

Specifications

Product Category	EEPROM	Series	RL78/G14
Height	5.7 mm	Length	35.6 mm
Product Type	EEPROM	Subcategory	Memory & Data Storage
Width	13.4 mm	Package/Case