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See Technical Specifications

QS8J11TCR +BOM

MOSFET transistor excels in demanding scenarios, offering superior signal integrity and fast switching times for efficient power management.

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

QS8J11TCR
Datasheet:

QS8J11TCR Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for QS8J11TCR

QS8J11TCR Information

Avaq Semiconductor offers the highly versatile and reliable QS8J11TCR driver, produced by ROHM Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the QS8J11TCR.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	3.5 A	Rds On - Drain-Source Resistance	31 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	22 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.5 W
Channel Mode	Enhancement	Configuration	Dual
Fall Time	60 ns	Product Type	MOSFET
Rise Time	30 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	170 ns	Typical Turn-On Delay Time	15 ns
Part # Aliases	QS8J11	Unit Weight	0.000353 oz
Package/Case	TSMT-8