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PUMB10,115 +BOM

50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

PUMB10,115 Information

General Description

The PUMB10 is a high-performance PNP/PNP double Resistor-Equipped Transistor (RET) contained in an ultra-compact SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. This device is designed for applications where space is limited and high efficiency is essential. With its versatile NPN/PNP complement PUMD10 and NPN/NPN complement PUMH10, the PUMB10 offers a wide range of possibilities for circuit design and implementation

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Key Features

  • Advanced noise reduction techniques
  • Increase in data transfer rate
  • Improved system accuracy and precision
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Application

  • User-friendly interface
  • Highly versatile
  • Long lasting durability
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Specifications

Product Category Bipolar Transistors - Pre-Biased Configuration Dual
Transistor Polarity PNP Typical Input Resistor 2.2 kOhms
Typical Resistor Ratio 0.047 Mounting Style SMD/SMT
Collector- Emitter Voltage VCEO Max 50 V Continuous Collector Current 100 mA
Peak DC Collector Current 100 mA Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Height 1 mm
Length 2.2 mm Product Type BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity 3000 Subcategory Transistors
Width 1.35 mm Part # Aliases 934057882115
Unit Weight 0.000265 oz Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA Frequency - Transition 180MHz
Power - Max 300mW Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Base Product Number PUMB10 Package/Case 6-TSSOP

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