



Images are for reference only See technical specifications
In Stock: 5,443
Phototransistors PT501 with Ic bin 20-80mA
PT501A
Restricted Availability
The PT501A is a phototransistor from Sharp Corp, packaged in a TO-18 package. It's a type of semiconductor component that combines a light-sensitive photodiode with a transistor in one device. The PT501A has an Ic bin range of 20-80mA, making it suitable for various applications where low current is required. The PT501A is designed to amplify weak light signals, allowing it to be used as a detector or amplifier in optoelectronic systems. Its small size and low power consumption make it ideal for use in compact devices such as consumer electronics, industrial control systems, and automotive applications. In summary, the PT501A is a phototransistor that can amplify weak light signals, making it suitable for various applications where low current is required.
According to the product information, the package type of PT501A is TO-18.
The manufacturer of the PT501A is Sharp Corp, a Japanese electronics company that specializes in the design, manufacture, and sale of electronic components, information equipment, and home appliances.
Voltage - Collector Emitter Breakdown (Max) | 45 V | Current - Collector (Ic) (Max) | 10 mA |
---|---|---|---|
Current - Dark (Id) (Max) | 100 nA | Wavelength | 800nm |
Viewing Angle | 12° | Power - Max | 75 mW |
Mounting Type | Through Hole | Orientation | Top View |
Operating Temperature | -25°C ~ 125°C (TA) | Package/Case | TO-18 |
1.Q: What are the recommended operating conditions for the PT501?
A: Operate at 45 V max VCEO, 75 mW max Pd, and within -25°C to +125°C temperature range.
2.Q: What package does the Sharp PT501 phototransistor use?
A: It comes in a TO-18-2 Metal Can package with dimensions 5.7 mm × 5.7 mm × 6.8 mm.
3.Q: What is the dark current specification of the PT501 phototransistor?
A: The dark current is typically 100 nA when no light is incident.
4.Q: What is the power dissipation (Pd) rating of the Sharp PT501?
A: The maximum power dissipation is 75 mW under recommended operating conditions.
5.Q: What is the absolute maximum collector-emitter voltage (VCEO) for the PT501?
A: The PT501’s VCEO max is 45 V; exceeding this may damage the device.
6.Q: What are typical applications for the Sharp PT501?
A: It’s used in optical switches, encoders, industrial sensors, and IR communication systems due to its high sensitivity and speed.
7.Q: What are the key features of the Sharp PT501 phototransistor?
A: Key features include a peak wavelength of 800 nm, 20–80 mA collector current (Ic bin), fast rise/fall time (10 μs), and a wide operating temperature range (-25°C to +125°C).
8.Q: What is the pinout configuration of the Sharp PT501 phototransistor?
A: The PT501 in a TO-18-2 Metal Can package has two pins: the collector (typically the longer lead) and the emitter.
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
We promise to provide 365 days quality assurance service for all our products.
Returns and exchanges are supported, provided the items remain in their original condition.
HK warehouse
(HKT)
Call for availability
*Lead times apply to standard orders and are based on business days only. Please contact us for details.
ESD
Tape and Reel
Cut Tape
Tube or Tray