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ROHS compliant TO-236AB package 60V MOSFET with 10V to 3.2V threshold at 250uA
PMV100EPAR
Active
The PMV100EPAR is a P-type MOSFET from Nexperia, offering low on-resistance and high voltage tolerance in a compact SOT-23 package. This device is suitable for various applications such as relay drivers, high-speed line drivers, high-side load switches, and switching circuits. The PMV100EPAR features enhanced thermal conductivity and reduced heat generation, making it well-suited for efficient power conversion. Its advanced package technology provides superior thermal performance, fast switching speed, and durable construction for long lifespan operation. With its low on-resistance and high voltage tolerance, this MOSFET is ideal for applications requiring high efficiency, reliability, and economic power consumption.
According to the product information, the features of PMV100EPAR are:
These features are intended to support applications such as Relay driver, High-speed line driver, High-side load switch, and Switching circuits.
The package type of PMV100EPAR is TO-236-3, SC-59, SOT-23-3.
The PMV100EPAR is a P-channel MOSFET with a SOT-23 package, having 3 pins:
This device is designed for low-power applications and has a maximum voltage rating of 60V and a current rating of 2.2A.
The manufacturer of the PMV100EPAR is Nexperia. Nexperia is a leading global provider of semiconductor components, including MOSFETs, IGBTs, and other power devices. They are known for their high-quality products and innovative solutions for various applications, such as automotive, industrial, and consumer electronics.
The PMV100EPAR MOSFET is suitable for relay driver, high-speed line driver, high-side load switch, and switching circuits applications. Its low on-resistance and high voltage tolerance make it an ideal component for efficient power conversion in various electronic systems, such as automotive, industrial control, and consumer electronics.
Based on Nexperia's product information, some equivalent products to PMV100EPAR are:
These MOSFETs share similar characteristics such as voltage rating, current handling, and package type. However, please note that exact equivalent products may vary depending on specific application requirements.
Source Content uid | PMV100EPAR | Part Life Cycle Code | Active |
---|---|---|---|
Pin Count | 3 | Reach Compliance Code | compliant |
Additional Feature | LOGIC LEVEL COMPATIBLE | Avalanche Energy Rating (Eas) | 33 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 2.2 A | Drain-source On Resistance-Max | 0.13 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 26 pF |
JEDEC-95 Code | TO-236AB | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Operating Temperature-Min | -55 °C | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 8.3 W | Pulsed Drain Current-Max (IDM) | 9 A |
Reference Standard | AEC-Q101; IEC-60134 | Surface Mount | YES |
Terminal Finish | Tin (Sn) | Terminal Form | GULL WING |
Terminal Position | DUAL | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Package/Case | SOT23-3 |
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