This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

PMPB07R3VPX +BOM

12 V, P-channel Trench MOSFET

Manufacturer:

Nexperia
Mfr.Part #:

PMPB07R3VPX
Datasheet:

PMPB07R3VPX Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for PMPB07R3VPX

PMPB07R3VPX Information

General Description

Featuring a sleek and modern design, the PMPB07R3VPX P-channel enhancement mode Field-Effect Transistor (FET) sets a new standard in semiconductor technology. Housed in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package, this transistor offers unparalleled performance and durability. With Trench MOSFET technology at its core, the PMPB07R3VPX delivers outstanding efficiency and reliability, making it a versatile choice for various electronic applications. Whether used in industrial equipment or automotive systems, this transistor excels in providing high-performance solutions for demanding environments

Key Features

Low threshold voltage
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction

Application

Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Computing power management

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	17.5 A	Rds On - Drain-Source Resistance	19 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	900 mV
Qg - Gate Charge	40 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	12.5 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	120 ns	Forward Transconductance - Min	30 S
Product Type	MOSFET	Rise Time	7 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	201 ns
Typical Turn-On Delay Time	3 ns	Part # Aliases	934662560115
Package/Case	UDFN-6