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PMK30EP

In Stock: 5,338

P-channel TrenchMOS extremely low level FET

PMK30EP Information

Description

The PMK30EP is a Power MOSFET offering from NXP Semiconductors. This device is a MOSFET, specifically designed for high-power electronic applications. The PMK30EP is suitable for use in power supplies, motor drives, and other high-power switching circuits. It offers the advantage of low on-resistance, making it an excellent choice for demanding applications where minimal loss is crucial. This device is designed for applications such as automotive electronics, industrial control systems, and consumer appliances. Its compact SOT-96-1-8 package makes it ideal for space-constrained designs. While operating this device requires caution due to the high voltage and current involved, its low input capacitance ensures reduced electromagnetic interference (EMI). Furthermore, the PMK30EP's reliable performance under harsh conditions makes it a trustworthy component for demanding applications.

Features

  • Low on-resistance
  • Compact SOT-96-1-8 package
  • Low input capacitance reduces EMI
  • Reliable performance under harsh conditions

Applications

  • Automotive electronics
  • Industrial control systems
  • Consumer appliances
  • Power supplies
  • Motor drives

Specifications

Source Content uid PMK30EP Part Life Cycle Code Transferred
Pin Count 8 Reach Compliance Code compliant
ECCN Code EAR99 Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 14.9 A
Drain-source On Resistance-Max 0.019 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA JESD-30 Code R-PDSO-G8
JESD-609 Code e4 Moisture Sensitivity Level 2
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 6.9 W Pulsed Drain Current-Max (IDM) 28.8 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Product Category MOSFET Product Type MOSFET
Subcategory MOSFETs Package/Case SOT-96-1-8

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