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See Technical Specifications

PMDPB30XN,115 +BOM

20 V, dual N-channel Trench MOSFET

Manufacturer:

Nexperia
Mfr.Part #:

PMDPB30XN,115
Datasheet:

PMDPB30XN,115 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for PMDPB30XN,115

PMDPB30XN,115 General Description

The PMDPB30XN,115 is a high-performance dual N-channel enhancement mode Field-Effect Transistor designed for applications requiring efficient power management in a compact form factor. This transistor is housed in a small and leadless ultra-thin DFN2020-6 (SOT1118) Surface-Mounted Device package, making it ideal for space-constrained designs. Utilizing advanced Trench MOSFET technology, this transistor delivers superior performance and reliability in a variety of voltage regulation and switching applications

Key Features

Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction

Application

Relay driver
LED backlight driver
Low-side loadswitch
Switching circuits

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	5.3 A	Rds On - Drain-Source Resistance	30 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	650 mV
Qg - Gate Charge	14.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	8.33 W
Channel Mode	Enhancement	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Part # Aliases	934066581115	Unit Weight	0.000238 oz
Package/Case	DFN-2020-6