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PHE13003A,412 +BOM

Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3

PHE13003A,412 General Description

Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 400 V Collector- Base Voltage VCBO 700 V
Emitter- Base Voltage VEBO 9 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 2.1 W
Gain Bandwidth Product fT - Minimum Operating Temperature -
Maximum Operating Temperature + 150 C DC Collector/Base Gain hfe Min 5
DC Current Gain hFE Max 30 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 5000 Subcategory Transistors
Technology Si Part # Aliases 934063927412
Unit Weight 0.007654 oz Package/Case TO-92-3

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.113 $0.56
50+ $0.091 $4.55
150+ $0.082 $12.30
1000+ $0.074 $74.00
2000+ $0.067 $134.00
5000+ $0.064 $320.00

The prices below are for reference only.

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