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PDTC123JT

In Stock: 7,461

Bipolar Transistors - Pre-Biased

PDTC123JT Information

Description

The NXP PDTC123JT is a surface-mount NPN transistor with built-in resistor, packaged in the SOT-23-3 package. It operates at a voltage of 50V and has a current rating of 100mA. This device is designed to provide a compact and efficient solution for various applications. The PDTC123JT can be used as a switch or amplifier in circuits that require low power consumption and small form factor. Its resistor-equipped design allows for easy integration into designs, reducing the need for external components. The transistor's NPN configuration makes it suitable for use in digital logic and analog circuitry. Overall, the PDTC123JT is a versatile component that can be used in a wide range of applications, including automotive, industrial, and consumer electronics. Its small size, low power consumption, and high reliability make it an attractive option for designers seeking to minimize board space and maximize performance.

Package

The package type of PDTC123JT is SOT-23-3.

Manufacturer

The manufacturer of the PDTC123JT is NXP. NXP is a leading semiconductor company that specializes in designing, manufacturing, and marketing microcontrollers, sensors, and other electronic components for various industries such as automotive, industrial, medical, and consumer electronics.

Applications

The PDTC123JT is a SMT NPN resistor-equipped transistor suitable for various applications, including:

  • Low-voltage logic circuits
  • Audio amplifiers
  • Motor control circuits
  • Power management systems
  • Automotive electronics

Its small size and low power consumption make it an ideal choice for space-constrained designs.

Specifications

Source Content uid PDTC123JT Pbfree Code Yes
Part Life Cycle Code Transferred Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.21.00.95 Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Collector Current-Max (IC) 0.1 A Collector-Base Capacitance-Max 3.5 pF
Collector-Emitter Voltage-Max 50 V Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.25 W Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Tin (Sn) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
VCEsat-Max 0.3 V Package/Case SOT23-3

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