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PD55025S

In Stock: 7,835

Plastic power semiconductor in SO-2 package

PD55025S Information

Description

The STMicroelectronics PD55025S is a high-performance RF MOSFET transistor designed for various wireless communication systems and applications. This N-channel power transistor features a breakdown voltage of 40V and a continuous drain current of 7A, making it suitable for demanding radio frequency (RF) amplification tasks. The device operates at frequencies up to 1 GHz with an impressive gain of 14.5 dB and output power of 25 W. Its operating temperature range spans from -65°C to +150°C, ensuring reliable performance in various environments. With a compact PowerSO-10RF-Straight-4 package and SMD/SMT mounting style, the PD55025S is perfect for space-constrained designs.

Features

  • N-channel power transistor
  • Breakdown voltage: 40V
  • Continuous drain current: 7A
  • Operating frequency: up to 1 GHz
  • Gain: 14.5 dB
  • Output power: 25 W
  • Temperature range: -65°C to +150°C

Applications

  • Wireless communication systems
  • Radio frequency (RF) amplification
  • Microwave applications

Specifications

Source Content uid PD55025S Pbfree Code No
Part Life Cycle Code Obsolete Pin Count 2
Reach Compliance Code not_compliant ECCN Code EAR99
Additional Feature HIGH RELIABILITY Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 7 A FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND JESD-30 Code R-PDSO-F2
JESD-609 Code e0 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 165 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN LEAD
Terminal Form FLAT Terminal Position DUAL
Transistor Application AMPLIFIER Transistor Element Material SILICON
Package/Case PowerSO-10RF-Straight-4

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