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PD55015-E

In Stock: 5,203

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Manufacturers:
STMicroelectronics, Inc
Mfr.Part#:
PD55015-E
Datasheet:
PD55015-E Datasheet (PDF)
Package/Case:
PowerSO-10RF (Formed Lead)
Product Type:
RF MOSFET Transistors
RoHS:
Lifecycle:
Active
EDA/CAD Models:
Request Free CAD Models for PD55015-E

PD55015-E Information

Description

The STMicroelectronics PD55015-E is a RF MOSFET transistor designed for microwave applications, offering low noise amplification, high gain bandwidth, and compact surface-mount packaging. The device features a PowerSO-10RF package and provides excellent thermal stability, low distortion, and a PIN-compatible configuration. With its robust reliability, fast switching speed, and low power consumption, this component is suitable for amplification and can operate over a wide frequency range. Additionally, the PD55015-E offers high-frequency performance, low noise figure, and flexible design options.

Features

According to the information provided, the features of PD55015-E are:

Suitable for microwave applications
Low noise amplification
High gain bandwidth
Compact surface-mount package
Easy integration
Robust reliability
Low power consumption
Suitable for amplification
Wide operating range
High IP3 performance
Flexible design options
Excellent thermal stability
Low distortion
PIN-compatible configuration
Fast switching speed

Please note that this is a summary of the features mentioned in the product description, and it may not be an exhaustive list.

Package

The package type of PD55015-E is PowerSO-10RF (Formed lead)-3.

Manufacturer

The manufacturer of the PD55015-E is STMicroelectronics, a leading global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products, including microcontrollers, memory devices, logic ICs, and more.

Equivalent

According to STMicroelectronics' product database, similar products for the PD55015-E include:

PD65012
PD65011
PD55101-BR1

These RF MOSFET transistors have similar characteristics such as low noise amplification and high gain bandwidth, making them suitable for microwave applications.

Specifications

Source Content uid	PD55015-E	Part Life Cycle Code	Active
Pin Count	10	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	23 Weeks
Additional Feature	HIGH RELIABILITY	Application	AMPLIFIER
Case Connection	SOURCE	Configuration	SINGLE
FET Technology	METAL-OXIDE SEMICONDUCTOR	Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
JESD-30 Code	R-PDSO-G2	Moisture Sensitivity Level	3
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	250
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON	Package/Case	PowerSO-10RF (Formed Lead)

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