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Bipolar Transistors - BJT
PBSS5160DS
SOT23-6
Active
The PBSS5160DS is a NXP-manufactured power transistor designed for high voltage, low current applications. It features a SOT23-6 package (SOT457 equivalent) for compact size. This device finds potential applications in switching circuits, motor control, or any situation where high isolation and efficient power handling are required. Please note that while the PBSS5160DS is well-suited for its intended purpose, specific application details may require additional design considerations or consultation with NXP technical support.
The PBSS5160DS by NXP is a TRANS 2PNP device with 60V rating, 0.77A current, and it's packaged in a SOT23-6 (SOT457) package. As for specific features, this particular model does not list any unique or specialized features in the provided information. It is primarily designed for general-purpose amplification or switching applications within the specified voltage and current limits.
The PBSS5160DS has a package type of SOT23-6, which is a 6-pin Surface Mount Technology package.
The PBSS5160DS is a TRANS 2PNP device with a 60V rating and a current capacity of 0.77A. It comes in a SOT23-6 (SOT457 package) which has six pins. Unfortunately, without specific documentation or an electrical diagram, the exact pin count function cannot be provided concisely in less than 200 words. For detailed information, consult the device's datasheet or contact the manufacturer, NXP.
The manufacturer of the PBSS5160DS is NXP, a leading semiconductor company. NXP specializes in providing innovative solutions for various industries, including automotive, consumer electronics, and communication infrastructure.
The PBSS5160DS from NXP is a Transistor designed primarily for switching or amplifying purposes in electronic circuits, particularly those involving power management or signal conditioning.
Source Content uid | PBSS5160DS | Part Life Cycle Code | Transferred |
---|---|---|---|
Pin Count | 6 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Collector Current-Max (IC) | 1 A |
Collector-Emitter Voltage-Max | 60 V | Configuration | SEPARATE, 2 ELEMENTS |
DC Current Gain-Min (hFE) | 200 | JESD-30 Code | R-PDSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 6 |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | PNP | Power Dissipation-Max (Abs) | 0.45 W |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | Tin (Sn) | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 220 MHz | Package/Case | SOT23-6 |
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