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See Technical Specifications

PBSS306NX,115 +BOM

100 V, 4.5 A NPN low VCEsat (BISS) transistor

Manufacturer:

Nexperia
Mfr.Part #:

PBSS306NX,115
Datasheet:

PBSS306NX,115 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

100 V
EDA/CAD Models:

Request Free CAD Models for PBSS306NX,115

PBSS306NX,115 Information

General Description

NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS306PX.

Key Features

Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified

Application

High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	100 V	Collector- Base Voltage VCBO	100 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	170 mV
Maximum DC Collector Current	4.5 A	Pd - Power Dissipation	2.1 W
Gain Bandwidth Product fT	110 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Height	1.6 mm
Length	4.6 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000	Subcategory	Transistors
Technology	Si	Width	2.6 mm
Part # Aliases	934059013115	Unit Weight	0.001448 oz
Package/Case	SOT-89