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NX3008CBKV,115 +BOM

30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET

NX3008CBKV,115 Information

General Description

The NX3008CBKV is a game-changer in the realm of Complementary N/P-channel enhancement mode Field-Effect Transistors, offering engineers a powerful and efficient solution for demanding electronic applications. Its innovative design, coupled with the use of Trench MOSFET technology, ensures high performance and reliability in a compact form factor. The ultra small and flat lead SOT666 package further enhances the versatility of this transistor, making it an ideal choice for a wide range of electronic devices that require precise power management and control

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Key Features

  • Superior power efficiency
  • Fast recovery time
  • High current handling
  • Robust package design
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Application

  • Motor driver
  • Sensor interface
  • Protection circuit
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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 400 mA Rds On - Drain-Source Resistance 1 Ohms, 2.8 Ohms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 900 mV
Qg - Gate Charge 170 pC, 230 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Qualification AEC-Q101
Product Type MOSFET Factory Pack Quantity 4000
Subcategory MOSFETs Part # Aliases 934065634115
Unit Weight 0.000098 oz Package/Case SOT-563

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