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NX3008CBKV,115 +BOM
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
SOT-563-
Manufacturer:
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Mfr.Part #:
NX3008CBKV,115
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel, P-Channel
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Number Of Channels:
2 Channel
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EDA/CAD Models:
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Availability: 7072 PCS
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NX3008CBKV,115 Information
General Description
The NX3008CBKV is a game-changer in the realm of Complementary N/P-channel enhancement mode Field-Effect Transistors, offering engineers a powerful and efficient solution for demanding electronic applications. Its innovative design, coupled with the use of Trench MOSFET technology, ensures high performance and reliability in a compact form factor. The ultra small and flat lead SOT666 package further enhances the versatility of this transistor, making it an ideal choice for a wide range of electronic devices that require precise power management and control
Key Features
- Superior power efficiency
- Fast recovery time
- High current handling
- Robust package design
Application
- Motor driver
- Sensor interface
- Protection circuit
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 400 mA | Rds On - Drain-Source Resistance | 1 Ohms, 2.8 Ohms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 900 mV |
Qg - Gate Charge | 170 pC, 230 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Product Type | MOSFET | Factory Pack Quantity | 4000 |
Subcategory | MOSFETs | Part # Aliases | 934065634115 |
Unit Weight | 0.000098 oz | Package/Case | SOT-563 |
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In Stock: 7,072
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