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NVS4409NT1G +BOM
This MOSFET has a power dissipation of 280mW at 4.5V and a current consumption of 250uA at 1.5V, making it suitable for low-power applications
SOT-323-
Manufacturer:
-
Mfr.Part #:
NVS4409NT1G
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Datasheet:
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Case Outline:
419-04
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MSL Temp (°C):
260
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Container Type:
REEL
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EDA/CAD Models:
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Availability: 5235 PCS
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NVS4409NT1G General Description
MOSFET, AEC-Q101, N-CH, 25V, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.249ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 280mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Key Features
- Perfect for commercial settings
- Leverages NVIDIA Quadro technology
- Promotes productivity and efficiency
- Ideal for graphics-intensive workloads
Application
- Powerful processing for industrial applications
- Rugged design for demanding environments
- Optimal choice for real-time image processing
Specifications
Status | Active | Case Outline | 419-04 |
MSL Temp (°C) | 260 | Container Type | REEL |
Package/Case | SOT-323 |
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NVS4409NT1G Datasheet PDF
NVS4409NT1G PDF Preview
In Stock: 5,235
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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