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NVS4409NT1G +BOM

This MOSFET has a power dissipation of 280mW at 4.5V and a current consumption of 250uA at 1.5V, making it suitable for low-power applications

NVS4409NT1G General Description

MOSFET, AEC-Q101, N-CH, 25V, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.249ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 280mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

ON Semiconductor, LLC Inventory

Key Features

  • Perfect for commercial settings
  • Leverages NVIDIA Quadro technology
  • Promotes productivity and efficiency
  • Ideal for graphics-intensive workloads
ON Semiconductor, LLC Original Stock

Application

  • Powerful processing for industrial applications
  • Rugged design for demanding environments
  • Optimal choice for real-time image processing
ON Semiconductor, LLC Inventory

Specifications

Status Active Case Outline 419-04
MSL Temp (°C) 260 Container Type REEL
Package/Case SOT-323

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Ratings and Reviews

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L
L**e 06/24/2023

I order, not the first time

16
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A**S 10/04/2022

Professional, courteous, friendly and simply a pleasure to work with. Thanks again I appreciate your business and look forward to doing more with avaq

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E**a 11/11/2021

Well packed, nice quality

9
D
D**l 05/30/2021

The parcel received within 5 days. the quality is good, i advise the seller.

2

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NVS4409NT1G Datasheet PDF

Preliminary Specification NVS4409NT1G PDF Download

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