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NTMFS5H600NLT1G

In Stock: 5,118

Power MOSFET 60V 250A 1.3 mOhm Single N Channel SO-8FL Logic Level

Manufacturers: onsemi
Mfr.Part#:
NTMFS5H600NLT1G
Datasheet:
NTMFS5H600NLT1G Datasheet (PDF)
Package/Case:
SO-8FL
Product Type:
Single FETs, MOSFETs
RoHS:
EDA/CAD Models:
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NTMFS5H600NLT1G Information

Description

The NTMFS5H600NLT1G is a MOSFET component from onsemi, designed for high-power applications. It's a N-channel device with a voltage rating of 60V and current handling capacity of 250A. The DFN package provides a compact footprint for easy integration into modern power systems. This MOSFET features advanced technology for safe and reliable operation, precise control, low power consumption, and real-time monitoring. Its high efficiency, fast turn-on time, and low loss ratio make it suitable for applications such as point-of-load modules, high-performance DC-DC converters, and secondary synchronous rectification. The NTMFS5H600NLT1G is RoHS compliant and has a compact design, making it an excellent choice for modern power systems that require high performance, efficiency, and reliability.

Features

According to the product information, the features of NTMFS5H600NLT1G are:

Safe and Reliable
Fully Modularized
Precise Control
Low Power Consumption
Easily Integrated
Real-Time Monitoring
High Efficiency
Fast On Time
Low Loss Ratio
RoHS Compliant
Compact Design
Multi-Functional

These features make it suitable for applications such as Point of Load Modules, High Performance DC-DC Converters, and Secondary Syn. Rectification.

Package

According to the product information, the package type of NTMFS5H600NLT1G is SO-FL EP-5.

Manufacturer

The manufacturer of the NTMFS5H600NLT1G is Onsemi. Onsemi is a leading provider of semiconductor components, including power semiconductors like MOSFETs.

Applications

According to the product information, the application areas of NTMFS5H600NLT1G are:

Point of Load Modules
High Performance DC-DC Converters
Secondary Syn. Rectification

Equivalent

Based on the product information, some equivalent products to NTMFS5H600NLT1G are:

STP16NF60L
IRF840
FET1010
NXP BUK9G5-50E

These MOSFETs have similar specifications and applications as NTMFS5H600NLT1G, including high current handling, 60V rating, and DFN package.

Specifications

Source Content uid	NTMFS5H600NLT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	70 Weeks
Avalanche Energy Rating (Eas)	338 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	250 A	Drain-source On Resistance-Max	0.0017 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	160 W
Pulsed Drain Current-Max (IDM)	900 A	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	250 A
Rds On - Drain-Source Resistance	1.1 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	89 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	160 W	Channel Mode	Enhancement
Fall Time	160 ns	Forward Transconductance - Min	280 S
Product Type	MOSFET	Rise Time	130 ns
Factory Pack Quantity	1500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	88 ns
Typical Turn-On Delay Time	28 ns	Unit Weight	0.026455 oz
Package/Case	SO-8FL

NTMFS5H600NLT1G FAQs

1.Q: Does the onsemi 60V MOSFET meet automotive qualification standards?

A: No, this particular MOSFET (as per the datasheet) is not automotive-qualified and doesn't have PPAP documentation.

2.Q: What is the typical gate charge at 10V for the onsemi logic-level Power MOSFET?

A: The typical gate charge is 89nC at Vgs=10V, with 40nC at 4.5V, making it suitable for logic-level drive applications.

3.Q: What package does the onsemi 250A N-Channel MOSFET use?

A: It uses a DFN5 5x6 package (1.27mm pitch) with SO-8FL designation, featuring 5 pins in a flat-lead surface-mount package measuring 4.9x5.9x1.05mm.

4.Q: What are the recommended operating conditions for the onsemi 1.3mΩ Power MOSFET?

A: Recommended conditions: Drain-Source voltage ≤60V, Gate-Source voltage ±20V max, operating temperature range -55°C to +150°C, and continuous drain current ≤35A.

5.Q: What is the thermal resistance (junction-to-ambient) of the onsemi DFN5 packaged MOSFET?

A: The maximum junction-to-ambient thermal resistance is 38°C/W when mounted on a PCB at 25°C ambient temperature.

6.Q: What is the absolute maximum rating for gate-source voltage of the onsemi SO-8FL Power MOSFET?

A: The absolute maximum gate-source voltage rating is ±20V. Exceeding this may cause permanent damage to the device.

7.Q: What are the typical applications for the onsemi 60V/250A Power MOSFET?

A: Typical applications include DC-DC converters, motor control, power management in industrial equipment, battery protection circuits, and high-current switching applications.

8.Q: What are the key features of the onsemi N Channel Power MOSFET (60V, 250A, 1.3mΩ)?

A: Key features include: 60V drain-source voltage, 250A current rating, ultra-low 1.3mΩ RDS(on), logic level gate drive (20V max), SO-8FL package, and 3.3W power dissipation capability.

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