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See Technical Specifications

NTMFS23D9N06HLT1G +BOM

MOSFET T8 60V LOW COSS

Manufacturer:

onsemi
Mfr.Part #:

NTMFS23D9N06HLT1G
Datasheet:

NTMFS23D9N06HLT1G Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for NTMFS23D9N06HLT1G

NTMFS23D9N06HLT1G General Description

When it comes to minimizing power losses and improving efficiency, the NTMFS23D9N06HLT1G stands out with its remarkable features. With a superior RDS(on) rating of 2.6 mΩ, this MOSFET is adept at optimizing power management tasks for enhanced performance

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	23 A	Rds On - Drain-Source Resistance	23.9 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.2 V
Qg - Gate Charge	6 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	28.8 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	22 ns	Product Type	MOSFET
Rise Time	28 ns	Factory Pack Quantity	1500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	12 ns	Typical Turn-On Delay Time	7 ns
Unit Weight	0.006173 oz	Package/Case	DFN-5