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NTLJS2103PTAG +BOM

P-channel MOSFET for demanding small signal needs

NTLJS2103PTAG Information

Key Features

  • Lowest RDS(on) Solution in 2x2 mm Package
  • WDFN Package Provides Exposed Drain Pad
  • 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
    Drive
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
  • RoHS Compliant

Application

  • High Side Load Switch
  • DC-DC Converters (Buck and Boost Circuits)
  • Optimized for Battery and Load Management Applications inPortable Equipment
  • Li-Ion Battery Linear Mode Charging

Specifications

Status Obsolete Compliance PbAHP
Case Outline 506AP MSL Type 1
MSL Temp (°C) 260 Container Type REEL
Container Qty. 3000 ON Target N
Channel Polarity P-Channel Configuration Single
V(BR)DSS Min (V) -12 VGS Max (V) 8
VGS(th) Max (V) 0.8 ID Max (A) 5.9
PD Max (W) 1.9 RDS(on) Max @ VGS = 2.5 V (mΩ) 35
RDS(on) Max @ VGS = 4.5 V (mΩ) 25 Qg Typ @ VGS = 4.5 V (nC) 8.5
Qg Typ @ VGS = 10 V (nC) 12.8 Ciss Typ (pF) 1157
Pricing ($/Unit) Price N/A Package/Case WDFN-6

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tel Tel: +852 95804164

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