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NTLJD3115PT1G

In Stock: 5,811

Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package

NTLJD3115PT1G Information

Description

Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package

Features

  • Economical and Reliable Solution
  • Wide Operating Temperature Range
  • Low EMI for Quiet Operation

Applications

  • Smart Load Management
  • Battery Protection Circuits
  • Portable Device Power

Specifications

Source Content uid NTLJD3115PT1G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 6
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 22 Weeks Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V Drain Current-Max (ID) 2.3 A
Drain-source On Resistance-Max 0.135 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N6 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 6 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case WDFN-6

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Service Support

Email: [email protected]

Teams: [email protected]

Tel: +852 95804164

Qualification

iso9001 duns iso14001

Payment Methods

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Shipping Information

  • Shipped From:

    HK warehouse

  • Expected Shipping Date:
    to
    (HKT)
  • Expected Quotation Date:

    (HKT)

  • Supplier Lead-Time:

    Call for availability

*Lead times apply to standard orders and are based on business days only. Please contact us for details.

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