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In Stock: 4,735
NTJS4151P: Power MOSFET 20V 4.2A 60 mOhm Single P-Channel SC-88/SC70-6/SOT-363
NTJS4151PT1G
obsolete
The NTJS4151PT1G is a Single P-Channel Trench Power MOSFET from Onsemi, designed for efficient power management in various applications. This device features leading trench technology, which reduces its on-resistance (RDS(on)) to extend battery life. It also comes with gate diodes for ESD protection. The NTJS4151PT1G is available in a compact SC-88 package, measuring 2x2 mm, making it ideal for maximum circuit board utilization. Its small outline and low RDS(on) make it suitable for applications such as smart load switches, overload protection, voltage regulation, and more. This Power MOSFET offers reliable performance, efficient power management, and advanced switching capabilities, making it an excellent choice for various electronic systems requiring precise control and protection.
The NTJS4151PT1G features:
The package type of NTJS4151PT1G is SC-88/SC70-6/SOT-363, which is a small outline package with 6 leads.
According to the product information, the package type is SC-88-6, which has a 6-lead configuration.
The pinout for NTJS4151PT1G is not explicitly listed in the provided information. However, based on the typical pinout for SC-88 packages, we can infer that it likely follows the standard SC-88 pinout:
The functions of these pins are:
The manufacturer of the NTJS4151PT1G is Onsemi, which is a semiconductor component manufacturer that designs, develops, manufactures, and supplies power semiconductors and discrete components to global original equipment manufacturers (OEM) and their customers. Onsemi was previously known as Fairchild Semiconductor until it was acquired by ON Semiconductor in 2016.
Based on the product information, the application areas of NTJS4151PT1G are:
Source Content uid | NTJS4151PT1G | Pbfree Code | Yes |
---|---|---|---|
Part Life Cycle Code | Active | Pin Count | 6 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 64 Weeks | Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
DS Breakdown Voltage-Min | 20 V | Drain Current-Max (ID) | 3.3 A |
Drain-source On Resistance-Max | 0.06 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 1 W |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Package/Case | SC-88-6 |
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