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NTJD4152PT1G +BOM

Tape and Reel Packaging for NTJD4152PT1G

NTJD4152PT1G Information

Description

The NTJD4152PT1G is a small signal MOSFET from Onsemi, specifically designed for dual P-channel operation with ESD protection. It features leading trench technology for low RDS(on) performance, making it suitable for energy-efficient applications. The device has a small footprint package (SOT-363 equivalent) and an ESD protected gate to ensure reliable operation. The NTJD4152PT1G is ideal for use in modern innovative designs that require compact size, high efficiency, and low power consumption. Its dual P-channel design makes it suitable for applications where two independent MOSFETs are required. With its small footprint and advanced features, this device is suitable for a wide range of portable devices, including smartphones, tablets, and laptops.

Features

According to the product information, the NTJD4152PT1G features:

  • Leading Trench Technology for Low RDS(on) Performance
  • Small Footprint Package (SC70-6 Equivalent)
  • ESD Protected Gate

These features are designed to provide a high-performance and reliable solution for various applications.

Package

The package type of NTJD4152PT1G is SOT-363.

Manufacturer

The manufacturer of the NTJD4152PT1G is ON Semiconductor (onsemi).

Applications

According to the product information, the application areas of NTJD4152PT1G are:

  • Energy Savings
  • Smart Technology
  • Compact Design
  • Modern Innovation
  • Effortless Operation
  • Enhanced Connectivity
  • Sleek and Stylish
  • Fast Charging
  • Versatile Use
  • Advanced Features
  • Easy Integration
  • Long Battery Life
  • Reliable Performance
  • Multiple Functions
  • User-Friendly Interface
  • High Efficiency
  • Low Power Consumption
  • Portable Devices

Specifications

Status Active Compliance PbAHP
Case Outline 419B-02 MSL Type 1
MSL Temp (°C) 260 Container Type REEL
Container Qty. 3000 ON Target Y
Channel Polarity P-Channel Configuration Dual
V(BR)DSS Min (V) -20 VGS Max (V) 12
ID Max (A) 0.88 PD Max (W) 0.272
RDS(on) Max @ VGS = 2.5 V (mΩ) Q1=Q2=345 RDS(on) Max @ VGS = 4.5 V (mΩ) Q1=Q2=215
Qg Typ @ VGS = 4.5 V (nC) 1.3 Qg Typ @ VGS = 10 V (nC) 2.2
Ciss Typ (pF) 155 Pricing ($/Unit) $0.1121Sample
Package/Case SOT-363

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