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Power MOSFET -20V -3A 155mΩ Dual P-Channel ChipFET™3.0 A Schottky Barrier Diode
NTHD4P02FT1G
obsolete
Power MOSFET -20V -3A 155mΩ Dual P-Channel ChipFET™
3.0 A Schottky Barrier Diode
Source Content uid | NTHD4P02FT1G | Pbfree Code | Yes |
---|---|---|---|
Part Life Cycle Code | Obsolete | Pin Count | 8 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Factory Lead Time | 11 Weeks |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 2.2 A | Drain-source On Resistance-Max | 0.155 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 50 pF |
JESD-30 Code | R-PDSO-F8 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 1.1 W | Pulsed Drain Current-Max (IDM) | 9 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | FLAT |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 90 ns | Turn-on Time-Max (ton) | 37 ns |
Package/Case | ChipFET-8 |
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