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See Technical Specifications

NTB13N10G +BOM

High-power N-channel MOSFET for demanding applications

Manufacturer:

onsemi
Mfr.Part #:

NTB13N10G
Datasheet:

NTB13N10G Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

13A (Ta)
EDA/CAD Models:

Request Free CAD Models for NTB13N10G

NTB13N10G Information

Avaq Semiconductor offers the highly versatile and reliable NTB13N10G driver, produced by onsemi. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the NTB13N10G.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	165mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 25 V
Power Dissipation (Max)	64.7W (Ta)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	NTB13
Package/Case	TO-263-3