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See Technical Specifications

NSVBC124EDXV6T1G +BOM

NPN BJT with high current gain and fast switching speed

Manufacturer:

onsemi
Mfr.Part #:

NSVBC124EDXV6T1G
Datasheet:

NSVBC124EDXV6T1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

463A-01
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NSVBC124EDXV6T1G

NSVBC124EDXV6T1G Information

General Description

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Key Features

Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Specifications

Status	Active	Compliance	PbAHP
Case Outline	463A-01	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	4000	ON Target	N
Polarity	Dual NPN	IC Continuous (A)	0.1
V(BR)CEO Min (V)	50	hFE Min	60
R1 (kΩ)	22	R2 (kΩ)	22
R1/R2 Typ	1	Vi(off) Max (V)	0.8
Vi(on) Min (V)	2.5	Pricing ($/Unit)	$0.088Sample
Package/Case	SOT-563