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NSV40302PDR2G +BOM

Low VCE(sat) Transistor, Complementary, 40 V, 3.0 A

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NSV40302PDR2G
Datasheet:

NSV40302PDR2G Datasheet (PDF)
Transistor Type:

NPN, PNP
Current - Collector (Ic) (Max):

3A
Voltage - Collector Emitter Breakdown (Max):

40V
Vce Saturation (Max) @ Ib, Ic:

115mV @ 200mA, 2A
EDA/CAD Models:

Request Free CAD Models for NSV40302PDR2G

NSV40302PDR2G General Description

When it comes to high power applications, the NSV40302PDR2G N-Channel MOSFET stands out for its impressive specifications. The combination of a 30V VDS rating, 62A ID rating, low RDS(ON) of 4.5mΩ, and low gate charge of 155nC make this MOSFET a reliable choice for demanding tasks. Its PowerPAK SO-8 package offers not only robust thermal performance but also easy installation on printed circuit boards. With its compact design, this MOSFET is a versatile option for applications where space-saving is key

Key Features

Real-time motion detection and alert functionality
Sigma-delta A/D conversion for improved image quality
Weather-resistant IP66-rated housing for harsh environments
Intelligent analytics for advanced object recognition
Fast 1/30s shutter speed for low-light applications
Built-in alarm output for notification of suspicious activity

Application

Advanced control systems
Efficient power management
Wireless communication modules

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays	Series	-
Transistor Type	NPN, PNP	Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	115mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 1A, 2V
Power - Max	653mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NSV40302	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	NPN, PNP
Configuration	Dual	Collector- Emitter Voltage VCEO Max	40 V
Collector- Base Voltage VCBO	40 V	Emitter- Base Voltage VEBO	6 V, 7 V
Collector-Emitter Saturation Voltage	82 mV, 135 mV	Maximum DC Collector Current	3 A
Pd - Power Dissipation	653 mW	Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Qualification	AEC-Q101	Continuous Collector Current	3 A
DC Collector/Base Gain hfe Min	150	DC Current Gain hFE Max	230
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	2500
Subcategory	Transistors	Technology	Si
Unit Weight	0.002540 oz	Package/Case	SOP-8