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NJVMJD253T4G +BOM

High-performance PNP transistor for automotive and industrial applications with 1400mW power dissipation

NJVMJD253T4G Information

Key Features

  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages

Specifications

Status Active Compliance PbAHP
Case Outline 369C MSL Type 1
MSL Temp (°C) 260 Container Type REEL
Container Qty. 2500 ON Target N
Polarity PNP Type General Purpose
VCE(sat) Max (V) 0.6 IC Cont. (A) 4
VCEO Min (V) 100 VCBO (V) 100
VEBO (V) 7 VBE(sat) (V) 1.8
VBE(on) (V) 1.5 hFE Min 40
hFE Max 180 fT Min (MHz) 40
PTM Max (W) 12.5 Pricing ($/Unit) $0.2945
Package/Case DPAK-3

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