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NIF9N05ACLT1G +BOM

Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection

NIF9N05ACLT1G Information

Key Features

  • Diode Clamp Between Gate and Source
  • ESD Protection - HBM 5000 V
  • Active Over - Voltage Gate to Drain Clamp
  • Scalable to Lower or Higher RDS(on)
  • Internal Series Gate Resistance

Application

  • Solenoid Drivers
  • Lamp Drivers
  • Small Motor Drivers

Specifications

Status Obsolete Compliance PbAHP
Case Outline 0.0318 MSL Type 3
MSL Temp (°C) 260 Container Type REEL
Container Qty. 1000 ON Target N
Channel Polarity N-Channel V(BR)DSS Min (V) 52
ID Typ (A) 9 rDS(on) Max (mΩ) 181
PD Max (W) 28.8 Pricing ($/Unit) Price N/A
Package/Case SOT-223-4

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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We promise to provide 365 days quality assurance service for all our products.
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Returns and exchanges are supported, provided the items remain in their original condition.

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In Stock: 6,298

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