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NGTB60N65FL2WG +BOM

High-efficiency, 3-pin TO-247 transistor suitable for DC/DC converters

Manufacturer:

onsemi
Mfr.Part #:

NGTB60N65FL2WG
Datasheet:

NGTB60N65FL2WG Datasheet (PDF)
Compliance:

PbAHP
MSL Type:

NA
MSL Temp (°C):

0
Container Type:

TUBE
EDA/CAD Models:

Request Free CAD Models for NGTB60N65FL2WG

NGTB60N65FL2WG Information

General Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Key Features

Extremely Efficient Trench with Field Stop Technology
T_jmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5µs Short-Circuit Capability
These are Pb-Free Devices

Application

Half bridge inverter
T-Type inverter
I-Type inverter

Specifications

Status	Last Shipments	Compliance	PbAHP
MSL Type	NA	MSL Temp (°C)	0
Container Type	TUBE	Container Qty.	30
ON Target	N	V(BR)CES Typ (V)	650
IC Max (A)	60	VCE(sat) Typ (V)	1.64
VF Typ (V)	2.13	Eoff Typ (mJ)	0.66
Eon Typ (mJ)	1.59	Trr Typ (ns)	96
Irr Typ (A)	6.8	Gate Charge Typ (nC)	318
Short Circuit Withstand (µs)	5	PD Max (W)	595
Pricing ($/Unit)	Price N/A	Package/Case	TO-247