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See Technical Specifications

NE5517DR2 +BOM

Versatile transconductance amplifier with dual channels

Manufacturer:

onsemi
Mfr.Part #:

NE5517DR2
Datasheet:

NE5517DR2 Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

751B-05
MSL Type:

1
MSL Temp (°C):

235
EDA/CAD Models:

Request Free CAD Models for NE5517DR2

NE5517DR2 Information

General Description

The NE5517DR2 is a versatile and high-performance product that offers significant advantages for programmable gain applications. With two current-controlled transconductance amplifiers, it provides a differential input and push-pull output, making it suitable for a wide range of industrial and consumer applications. The inclusion of linearizing diodes at the inputs enhances circuit performance, resulting in a 10 dB signal-to-noise improvement referenced to 0.5% THD. This ensures clear and quality audio output, making it ideal for high-quality audio applications

Key Features

Low Jitter Clocking Schemes
Accurate Time Stamp Generation
Synchronized Data Streaming
Precision Analog-to-Digital Conversion
Rapid Data Processing
Improved System Reliability

Application

Multiplexers
Timers
DolbyE HX Systems
Current-controlled Amplifiers, Filters
Current-controlled Oscillators, Impedances

Specifications

Status	Obsolete	Compliance	PbAHP
Case Outline	751B-05	MSL Type	1
MSL Temp (°C)	235	Container Type	REEL
Container Qty.	2500	ON Target	N
Rail to Rail	No	Channels	2
VS Min (V)	10	VS Max (V)	18
Iq Typ (mA)	1.3	VOS Max (mV)	5
GBW Typ (MHz)	2	SR Typ (V/µs)	50
IO Typ (mA)	0.005	ΔVOS/ΔT (μV/C)	7
Ibias Typ (pA)	400000	CMRR Typ (dB)	110
Architecture	Bipolar	Temperature Range (°C)	0 to 70
Pricing ($/Unit)	Price N/A	Package/Case	SOIC-16