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NDS356AP-NB8L005A Image
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NDS356AP-NB8L005A

In Stock: 6,938

Efficient Power Management with Low Noise Operation and Wide Operation Range - NDS356AP-NB8L005A Key Features.

NDS356AP-NB8L005A Information

Description

SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

  • -1.1 A, -30 V
    rDS(ON) = 0.3 Ω @ VGS = -4.5 V
    rDS(ON) = 0.2 Ω @ VGS = -10 V
  • Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.
  • High Density Cell Design for Extremely Low rDS(ON)
  • Exceptional On-Resistance and Maximum DC Current Capability

Applications

  • This product is general usage and suitable for many different applications

Specifications

Status Obsolete Compliance PbAHP
Case Outline 527AG MSL Type 1
MSL Temp (°C) 260 Container Type REEL
Container Qty. 3000 ON Target N
Channel Polarity P-Channel Configuration Single
V(BR)DSS Min (V) -30 VGS Max (V) 20
VGS(th) Max (V) -3 ID Max (A) -1.1
PD Max (W) 0.5 RDS(on) Max @ VGS = 4.5 V (mΩ) 300
RDS(on) Max @ VGS = 10 V (mΩ) 200 Qg Typ @ VGS = 10 V (nC) 3.4
Ciss Typ (pF) 280 Pricing ($/Unit) Price N/A
Package/Case SOT-23-3

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Tel: +852 95804164

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