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NBRS2H100T3G-VF01 +BOM

Silicon-based Schottky diode for efficient, 2A power conversion up to 100V for various applications

Manufacturer:

onsemi
Mfr.Part #:

NBRS2H100T3G-VF01
Datasheet:

NBRS2H100T3G-VF01 Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

403A-03
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NBRS2H100T3G-VF01

NBRS2H100T3G-VF01 Information

General Description

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

Key Features

Compact Package with J-Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard-Ring for Overvoltage Protection
Low Forward Voltage Drop
This is a Pb-Free Device

Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL 94 V-0 @ 0.125 in
Weight: 70 mg (approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
ESD Ratings:
Machine Model = C, Human Body Model = 3B
Device Meets MSL1 Requirements
NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Application

Power Conversion Circuit
Reverse Battery Protection
Gate Driving Circuit
Protection and Free-Wheeling

Specifications

Status	Last Shipments	Compliance	PbAHP
Case Outline	403A-03	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	2500	ON Target	N
Configuration	Single	VRRM Min (V)	100
VF Max (V)	0.79	IRM Max (µA)	8
IO(rec) Max (A)	2	IFSM Max (A)	130
trr Max (ns)	~NA~	Cj Max (pF)	~NA~
Pricing ($/Unit)	Price N/A	Package/Case	SMB-2