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See Technical Specifications

MT46H64M16LFBF-5 IT:B +BOM

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

Manufacturer:

Micron Semiconductor Products Inc
Mfr.Part #:

MT46H64M16LFBF-5 IT:B
Datasheet:

MT46H64M16LFBF-5 IT:B Datasheet (PDF)
Series: MT46H64M16LFBF-5 IT
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

60

MT46H64M16LFBF-5 IT:B Information

Description

The MT46H64M16LFBF-5IT:B is a 1Gb x16 Mobile LPDDR SDRAM component manufactured by Micron Technology. It features a VFBGA-60 package, with a data transfer rate of 200 MHz and a latency of 5 ns. This device is designed for various applications such as automotive, industrial, and commercial use. It provides high-speed memory storage and retrieval capabilities, making it suitable for devices that require fast data processing and storage.

Features

The MT46H64M16LFBF-5IT:B features a 1Gb x16 Mobile LPDDR SDRAM with:

Operating frequency: 200 MHz
Latency: 5 ns
Package: VFBGA-60 (8x9)
Target output drive characteristics at different strengths and truth tables for various commands and operations

It is designed for various applications, including automotive, industrial, and commercial use.

Package

The package type of MT46H64M16LFBF-5IT:B is VFBGA-60.

Manufacturer

The manufacturer of the MT46H64M16LFBF-5IT:B is Micron Technology, which is a leading global semiconductor provider that specializes in designing, manufacturing, and marketing memory, storage, and networking solutions.

Applications

According to the product information, the MT46H64M16LFBF-5IT:B Mobile LPDDR component can be used in various applications, including:

Automotive
Industrial
Commercial

Note that it is not recommended for use in critical applications where failure could result in harm or damage.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	60	Reach Compliance Code	not_compliant
ECCN Code	EAR99	HTS Code	8542.32.00.32
Access Mode	FOUR BANK PAGE BURST	Access Time-Max	5 ns
Additional Feature	AUTO/SELF REFRESH	Clock Frequency-Max (fCLK)	200 MHz
I/O Type	COMMON	Interleaved Burst Length	2,4,8,16
JESD-30 Code	R-PBGA-B60	JESD-609 Code	e1
Length	9 mm	Memory Density	1073741824 bit
Memory IC Type	DDR1 DRAM	Memory Width	16
Number of Functions	1	Number of Ports	1
Number of Terminals	60	Number of Words	67108864 words
Number of Words Code	64000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	64MX16	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	260	Qualification Status	Not Qualified
Refresh Cycles	8192	Seated Height-Max	1 mm
Self Refresh	YES	Sequential Burst Length	2,4,8,16
Standby Current-Max	0.00001 A	Supply Current-Max	0.135 mA
Supply Voltage-Max (Vsup)	1.95 V	Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	TIN SILVER COPPER	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	30	Width	8 mm
Package/Case	VFBGA-60