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MSC025SMA120B4

In Stock: 6,221

1200V Silicon Carbide (SiC) MOSFET.

MSC025SMA120B4 Information

Description

The MSC025SMA120B4 is a Silicon Carbide (SiCFET) N-Channel MOSFET from Microchip, designed for high-power applications. It features low capacitances and gate charge, fast switching speed, and stable operation at high temperatures. The device has a maximum current rating of 103A and voltage rating of 1200V. Its TO-247-4 package provides excellent thermal performance. This MOSFET is suitable for use in power supplies, motor drives, and other applications where high-power switching is required. Its fast body diode and superior avalanche ruggedness make it a reliable choice for demanding environments. Additionally, the device meets RoHS compliance standards, making it a suitable option for environmentally friendly designs.

Features

According to the product information, the features of MSC025SMA120B4 are:

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature up to 175°C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Package

The package type of MSC025SMA120B4 is TO-247-4.

Pinout

The MSC025SMA120B4 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a TO-247-4 package.

The pin count of the MSC025SMA120B4 is 4:

  • Pin 1: Drain (D)
  • Pin 2: Source (S)
  • Pin 3: Gate (G)
  • Pin 4: Emitter (E)

The functions of each pin are: - Drain (D): The high-side terminal, where the current flows out. - Source (S): The low-side terminal, where the current flows in. - Gate (G): The control terminal that regulates the flow of current between the drain and source. - Emitter (E): Not used in this MOSFET.

Please note that the TO-247-4 package is a standard package for power electronic devices like MOSFETs.

Manufacturer

The manufacturer of the MSC025SMA120B4 is Microchip. Microchip is a semiconductor design and fabrication services provider. They offer a range of products, including microcontrollers, memory devices, and power management solutions.

Applications

The MSC025SMA120B4 MOSFET is suitable for high-power applications such as:

  • Industrial power supplies
  • Motor drives
  • Power factor correction (PFC) circuits
  • DC-DC converters
  • Renewable energy systems

Its high voltage and current ratings, combined with its fast switching speed and low gate charge, make it an ideal component for demanding power electronics applications.

Specifications

Part Life Cycle Code Active Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.29.00.95
Factory Lead Time 12 Weeks Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 103 A Drain-source On Resistance-Max 0.031 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4 Number of Elements 1
Number of Terminals 4 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 500 W
Pulsed Drain Current-Max (IDM) 275 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON CARBIDE
Package/Case TO-247-4

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