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1200V Silicon Carbide (SiC) MOSFET.
MSC025SMA120B4
Active
The MSC025SMA120B4 is a Silicon Carbide (SiCFET) N-Channel MOSFET from Microchip, designed for high-power applications. It features low capacitances and gate charge, fast switching speed, and stable operation at high temperatures. The device has a maximum current rating of 103A and voltage rating of 1200V. Its TO-247-4 package provides excellent thermal performance. This MOSFET is suitable for use in power supplies, motor drives, and other applications where high-power switching is required. Its fast body diode and superior avalanche ruggedness make it a reliable choice for demanding environments. Additionally, the device meets RoHS compliance standards, making it a suitable option for environmentally friendly designs.
According to the product information, the features of MSC025SMA120B4 are:
The package type of MSC025SMA120B4 is TO-247-4.
The MSC025SMA120B4 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a TO-247-4 package.
The pin count of the MSC025SMA120B4 is 4:
The functions of each pin are: - Drain (D): The high-side terminal, where the current flows out. - Source (S): The low-side terminal, where the current flows in. - Gate (G): The control terminal that regulates the flow of current between the drain and source. - Emitter (E): Not used in this MOSFET.
Please note that the TO-247-4 package is a standard package for power electronic devices like MOSFETs.
The manufacturer of the MSC025SMA120B4 is Microchip. Microchip is a semiconductor design and fabrication services provider. They offer a range of products, including microcontrollers, memory devices, and power management solutions.
The MSC025SMA120B4 MOSFET is suitable for high-power applications such as:
Its high voltage and current ratings, combined with its fast switching speed and low gate charge, make it an ideal component for demanding power electronics applications.
Part Life Cycle Code | Active | Reach Compliance Code | |
---|---|---|---|
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Factory Lead Time | 12 Weeks | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 1200 V |
Drain Current-Max (ID) | 103 A | Drain-source On Resistance-Max | 0.031 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T4 | Number of Elements | 1 |
Number of Terminals | 4 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 500 W |
Pulsed Drain Current-Max (IDM) | 275 A | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON CARBIDE |
Package/Case | TO-247-4 |
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