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MSC017SMA120J

In Stock: 7,507

N-Channel 1200 V 88A (Tc) 278W (Tc) SOT-227

Manufacturers: Microchip Technology
Mfr.Part#:
MSC017SMA120J
Package/Case:
SOT-227
Product Type:
Single FETs, MOSFETs
RoHS:
Lifecycle:
ACTIVE
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MSC017SMA120J Information

Description

The MSC017SMA120J is a high-performance N-channel power MOSFET by Microchip Technology. Key features include low gate charge, fast switching speed, stable operation at high temperatures, and reliable body diode. This device finds applications in power electronics systems where high current handling and efficient switching are crucial. Its robustness against voltage surges makes it suitable for use in inverters, motor drives, and other power-intensive circuits.

Features

The MSC017SMA120J features include:
Low capacitance and gate charge for fast switching.
Fast internal ESR promotes stable high-temperature operation.
Reliable body diode for quick recovery.
Superior avalanche ruggedness for safe operation under extreme conditions.
RoHS compliant to meet environmental standards. These features make the MSC017SMA120J suitable for applications requiring fast switching, high-temperature stability, and robustness in extreme conditions.

Package

The package type of MSC017SMA120J is SOT-227-4, a small surface-mount package.

Pinout

The MSC017SMA120J is an N-channel power MOSFET in a SOT-227 package. The pin count for this device is typically one, as the body diode acts as a built-in connection. Functionally, there's no dedicated control or gate pin since the gate signal is applied between source and drain through a bootstrap capacitor (usually not included in the datasheet). In summary, the MSC017SMA120J has one pin (no dedicated control pin) and functions as an N-channel power MOSFET with built-in body diode.

Manufacturer

The manufacturer of the MSC017SMA120J is Microchip Technology. Microchip is a semiconductor company, known for producing integrated circuits, microcontrollers, and other electronic components. They focus on innovation in the embedded systems market.

Applications

The MSC017SMA120J is a high-voltage power transistor designed for use in motor drives, inverters, and power conditioning applications. With its low gate charge and fast switching speed, it enables efficient and reliable energy management.

Specifications

FET Type	N-Channel	Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V	Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V	Rds On (Max) @ Id, Vgs	22mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	2.7V @ 4.5mA (Typ)	Gate Charge (Qg) (Max) @ Vgs	249 nC @ 20 V
Vgs (Max)	+23V, -10V	Input Capacitance (Ciss) (Max) @ Vds	5280 pF @ 1000 V
Power Dissipation (Max)	278W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Base Product Number	MSC017	Package/Case	SOT-227

MSC017SMA120J FAQs

1.Q: Are there related SiC MOSFETs in Microchip's portfolio?

A: Microchip offers similar SiC MOSFETs with varying voltage/current ratings, such as [Part#X] (900V/120A) and [Part#Y] (1700V/60A), for diverse power designs.

2.Q: What thermal management is recommended for this MOSFET?

A: Use proper heatsinking to maintain junction temperature below 175°C, given its 278W maximum power dissipation capability.

3.Q: What is the typical reverse recovery time (trr) of the body diode?

A: The body diode has a typical reverse recovery time (trr) of 40ns, minimizing switching losses in high-frequency applications.

4.Q: What is the operating temperature range for this MOSFET?

A: It operates from -55°C to 175°C junction temperature, suitable for extreme environments.

5.Q: Does Microchip's 1.2kV SiC MOSFET comply with industry certifications?

A: Yes, it is ROHS-compliant and classified under ECCN EAR99 for global commercial use.

6.Q: What are the dimensions of the SOT-227-4 package used in this MOSFET?

A: The package measures 38.2mm (max) in length, 25.4mm (max) in width, and 9.6mm (max) in height, designed for robust thermal management.

7.Q: What is the typical gate charge (Qg) of Microchip's SOT-227-4 SiC MOSFET at 20V?

A: The typical total gate charge (Qg) is 249nC at Vgs=20V, ensuring efficient switching performance.

8.Q: What is the absolute maximum gate-source voltage (Vgs) for this MOSFET?

A: The absolute maximum gate-source voltage (Vgs) is ±23V to avoid damage to the gate oxide layer.

9.Q: What applications are suitable for Microchip's 1.2kV SiC MOSFET?

A: Ideal for electric vehicle systems, industrial motor drives, solar inverters, and high-voltage power supplies requiring fast switching and low losses.

10.Q: What are the key features of Microchip Technology's 1.2kV 88A SiC MOSFET (SOT-227-4)?

A: Key features include a 1200V drain-source voltage, 88A continuous current, 22mΩ Rds(on) at 40A/20V, SiC material for high efficiency, and a screw-mount SOT-227-4 package with 278W power dissipation.

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