Description
The MS2215 is a semiconductor component from Advanced Power Technology, a microchip technology product. It is designed for various applications, including power management, signal processing, and data storage. The MS2215 offers high-performance capabilities, reliability, and scalability, making it suitable for use in a wide range of industries, such as consumer electronics, automotive, industrial automation, and more.
Manufacturer
According to the product information, the manufacturer of the MS2215 is Advanced Power Technology.
Specifications
| Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
55V |
| Frequency - Transition |
960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f) |
- |
| Gain |
7.5dB |
Power - Max |
300W |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 5A, 5V |
Current - Collector (Ic) (Max) |
16.5A |
| Operating Temperature |
250°C (TJ) |
Mounting Type |
Chassis Mount |
| Package/Case |
M216
|
MS2215 FAQs
1.Q: Is the APT M-216-4 compliant with automotive standards?
A: No, this part is not automotive-grade (PPAP/automotive certification not supported) and is marked as obsolete.
2.Q: What package does the APT M-216-4 transistor use?
A: It uses a screw-mount Case M-216 (4-pin) with dimensions 22.86mm (L) × 10.34mm (W) × 5.84mm (H).
3.Q: What is the typical power gain of the APT NPN RF transistor?
A: The minimum typical power gain is 7.5dB, suitable for high-efficiency RF amplification stages.
4.Q: What are the recommended operating conditions for the APT 16.5A RF BJT?
A: Operate within: V<sub>CE</sub> = 50–60V, I<sub>C</sub> = 8–16.5A, DC current gain (h<sub>FE</sub>) ≥20@5A/5V, and T<sub>j</sub> = -65°C to +250°C.
5.Q: What is the thermal resistance (R<sub>θJC</sub>) of the APT M-216-4 package?
A: The junction-to-case thermal resistance is 0.57°C/W, ensuring efficient heat dissipation with proper mounting.
6.Q: What are the absolute maximum ratings for the APT M-216-4 transistor?
A: Max ratings: V<sub>CB</sub>/V<sub>CE</sub> = 55V, V<sub>EB</sub> = 3.5V, I<sub>C</sub> = 16.5A, P<sub>diss</sub> = 300W, and T<sub>j</sub> = 250°C. Exceeding these may damage the device.
7.Q: What are typical applications for the APT M-216-4 NPN transistor?
A: Used in RF power amplifiers, industrial heating systems, plasma generators, and high-frequency switching circuits (50–60V range).
8.Q: What are the key features of the APT 55V 16.5A NPN RF transistor?
A: Key features include: 55V collector-emitter voltage, 16.5A max current, 300W power dissipation, 7.5dB min power gain, and 1215MHz transition frequency. Ideal for high-power RF amplification.
9.Q: What is the pinout configuration of the APT NPN RF BJT (Case M-216-4)?
A: This 4-pin device follows the standard M-216 package: Pin 1 (Emitter 1), Pin 2 (Base 1), Pin 3 (Collector), Pin 4 (Base 2). Note: It features a dual-base design for RF stability.
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