Description
The MS2211 is an RF bipolar transistor designed by Advanced Power Technology for avionics applications. It features a CaseM222-4 package, which provides a compact and reliable solution for high-frequency operations. This transistor is suitable for use in various aerospace and defense systems that require high-performance and reliability.
As an RF bipolar transistor, the MS2211 is capable of handling high-frequency signals with low noise and distortion. Its performance characteristics make it an excellent choice for applications such as radio frequency amplifiers, filters, and switches.
In summary, the MS2211 is a specialized RF bipolar transistor designed for avionics and aerospace applications, offering high-performance and reliability in a compact package.
Package
According to the product information, the package type of MS2211 is "CaseM222-4".
Manufacturer
The manufacturer of the MS2211 is Advanced Power Technology, which is a semiconductor component supplier.
Applications
Based on the product information, I can infer that the MS2211 RF Bipolar Transistor is designed for avionics applications. Therefore, its application areas are likely to be in the aerospace industry, specifically in aircraft systems such as navigation, communication, and radar equipment.
Specifications
| Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
48V |
| Frequency - Transition |
960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f) |
- |
| Gain |
9.3dB |
Power - Max |
25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 250mA, 5V |
Current - Collector (Ic) (Max) |
900mA |
| Operating Temperature |
250°C (TJ) |
Mounting Type |
Chassis Mount |
| Package/Case |
M222 |
MS2211 FAQs
1.Q: What is the typical power gain of the M222 RF transistor?
A: The M222 offers a minimum typical power gain of 9.3dB under specified operating conditions.
2.Q: Are there any industry certifications for the M222 transistor?
A: The product has ECCN EAR99 classification but is marked as obsolete. No PPAP or automotive certifications are indicated.
3.Q: What package does the M222 transistor use?
A: It uses a Case M-222-4 screw-mount package measuring 20.32mm(length) × 7.87mm(width) × 5.84mm(height).
4.Q: What are the recommended operating conditions for the M222?
A: Recommended operating conditions: 40-50V collector-emitter voltage, 0.5-2A collector current, and -65°C to +250°C temperature range.
5.Q: What is the thermal resistance of the M222 package?
A: The maximum junction-case thermal resistance is 7°C/W for this chassis-mount transistor.
6.Q: What are the absolute maximum ratings for the M222 transistor?
A: Absolute max ratings: 48V collector-emitter/base voltage, 3.5V emitter-base voltage, 900mA collector current, and 250°C junction temperature.
7.Q: What are typical applications for the M222 RF transistor?
A: Typical applications include RF power amplifiers in the 960MHz-1.215GHz range, particularly in industrial and communication equipment.
8.Q: What is the pinout configuration for the M222 RF transistor?
A: The M222 comes in a 4-pin Case M-222-4 package with single dual base configuration. Exact pin functions should be verified in the datasheet.
9.Q: What are the key features of the Advanced Power Technology M222 RF transistor?
A: Key features include NPN type, 48V voltage rating, 900mA current, 960MHz-1.215GHz frequency range, 25W power dissipation, and 9.3dB typical power gain.
Payment
Shipping & Packing
Warranty
