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MS1226

In Stock: 4,217

RF Bipolar Transistors Bipolar/LDMOS Transistor

Manufacturers: Microsemi Corporation
Mfr.Part#:
MS1226
Datasheet:
MS1226 Datasheet (PDF)
Package/Case:
M113
Product Type:
RF Bipolar Transistors
Lifecycle:
Factory Special Order

MS1226 Information

Description

The MS1226 is a General Purpose Bipolar Junction Transistor (GBT) NPN type, manufactured by Microchip Technology. It has a voltage rating of 36V and a current rating of 4.5A. The transistor comes in a Style M113-4 package, which is a 4-pin configuration. The MS1226 is designed for general-purpose applications where high voltage and current are required. Its NPN structure allows it to operate as an amplifier or switch, making it suitable for various electronic circuits.

Features

According to the provided information, there is no feature listed for the MS1226 product. The "Features" section is left blank, indicating that Microchip Technology did not provide any specific features or characteristics for this particular semiconductor component.

Package

According to the product information, the package type of MS1226 is "Style M113-4".

Manufacturer

The manufacturer of the MS1226 is Microchip Technology, a semiconductor company that designs, manufactures, and sells specialized semiconductor products used in a wide range of applications.

Applications

The MS1226, a NPN transistor from Microchip Technology, is suitable for general-purpose amplification and switching applications. Its high voltage rating (36V) makes it suitable for use in audio equipment, motor control circuits, and other applications where high voltage is required. It can also be used as a driver for LEDs or relays.

Equivalent

Based on the product information, MS1226 is a Trans GP BJT NPN component from Microchip Technology. Equivalent products can be found in other manufacturers' catalogs. Some possible alternatives could be:

ON Semiconductor: MMBT3904
STMicroelectronics: BD140
Texas Instruments: 2N3904

Please note that these are just potential equivalents and may not have identical specifications or performance characteristics.

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Collector Current-Max (IC)	4.5 A	Collector-Base Capacitance-Max	65 pF
Collector-Emitter Voltage-Max	36 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	10	Highest Frequency Band	HIGH FREQUENCY BAND
JESD-30 Code	O-PRFM-F4	Number of Elements	1
Number of Terminals	4	Operating Temperature-Max	200 °C
Polarity/Channel Type	NPN	Power Gain-Min (Gp)	18 dB
Surface Mount	NO	Terminal Form	FLAT
Terminal Position	RADIAL	Transistor Element Material	SILICON
Package/Case	M113

MS1226 FAQs

1.Q: Is the Microsemi M113 compliant with automotive or industry certifications?

A: No. It’s obsolete, non-automotive (PPAP/automotive: "No"), and has no mentioned certifications beyond ECCN EAR99.

2.Q: What package does the Microsemi M113 NPN transistor use?

A: It uses a 4-pin "Style M113" screw-mount package with max dimensions 24.89mm (L) × 6.48mm (W) × 7.11mm (H).

3.Q: What are the recommended operating conditions for the Microsemi M113?

A: Operate at ≤36V collector-emitter voltage, ≤4.5A current, and within -65°C to 200°C. Bias example: 28V/25mA.

4.Q: What is the thermal resistance of the Microsemi M113 package?

A: The junction-to-case thermal resistance is 2.2°C/W, critical for heat dissipation in its 80W max power dissipation design.

5.Q: What are the absolute maximum ratings for the Microsemi M113 transistor?

A: Max ratings: 65V (collector-base), 36V (collector-emitter), 4V (emitter-base), 4.5A DC collector current, and 200°C junction temperature.

6.Q: What are typical applications for the Microsemi M113 NPN BJT?

A: It suits high-power switching/amplification, such as industrial motor drivers, power supplies, or RF amplifiers (up to 30MHz transition frequency).

7.Q: What are the key features of the Microsemi M113 NPN transistor?

A: Key features include: 36V max collector-emitter voltage, 4.5A DC collector current, 30W output power, 18dB typical power gain, and a screw-mount package for thermal management.

8.Q: What is the pinout configuration of the Microsemi M113 NPN BJT (Style M113-4)?

A: The M113 is a 4-pin package with a single NPN transistor featuring a dual-emitter configuration. Exact pin functions (base, collector, emitters) should be verified in the datasheet due to the non-standard "Style M113" package.

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