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Trans RF MOSFET N-CH 179V 5-Pin NI-1230H T/R
NI-1230H-4Manufacturer:
Mfr.Part #:
MRFX1K80HR5
Datasheet:
Series: MRFX1K80H
F<sub>i(RF)</sub> [max] (MHz):
400
Number Of Pins:
4
Amp Class:
AB
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The MRFX1K80HR5 is a LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor from NXP Semiconductors, specifically designed for RF (Radio Frequency) applications. It has a voltage rating of 193V and is packaged in the NI1230H-4 package type. This transistor is suitable for use in high-power RF amplifiers, transmitters, and receivers, where its high power handling capability and low distortion characteristics are beneficial. The MRFX1K80HR5 is likely used in a variety of applications such as wireless communication systems, radar systems, and satellite communications. In summary, the MRFX1K80HR5 is a high-power RF transistor designed for demanding RF amplifier and transmitter applications, offering high reliability and performance.
Based on the provided information, I can tell you that the MRFX1K80HR5 is an LDMOS transistor from NXP Semiconductors. It has a package type of NI1230H-4.
As for its features, here are some key points:
The package type of MRFX1K80HR5 is NI1230H-4.
The manufacturer of the MRFX1K80HR5 is NXP Semiconductors. NXP Semiconductors is a leading semiconductor company that specializes in designing, manufacturing, and marketing semiconductors for various industries such as automotive, industrial, consumer, and more. They are known for their expertise in areas like secure communication, sensing, and power management.
Based on the product information, I can tell you that the application area for MRFX1K80HR5 is likely related to RF (Radio Frequency) applications, specifically in LDMOS transistor-based systems. This could include wireless communication systems, such as cellular networks, satellite communications, or radar systems.
f<sub>i(RF)</sub> [max] (MHz) | 400 | Number of pins | 4 |
Amp Class | AB | Test Signal | Pulse |
Supply Voltage (Typ) (V) | 65 | Class | AB |
Die Technology | LDMOS | Thermal Resistance (Spec) (℃/W) | 0.09 |
P1dB (Typ) (dBm) | 62.6 | Security Status | COMPANY PUBLIC |
Frequency (Min-Max) (MHz) | 1.8,400 | Efficiency (Typ) (%) | 75.1 |
Frequency Band (Hz) | 1800000,400000000 | Description | Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V |
f<sub>i(RF)</sub> [min] (MHz) | 1.8 | P1dB (Typ) (W) | 1800 |
Gain (Typ) (dB) | 25.1 | Power Gain (Typ) (dB) @ f (MHz) | 25.1 @ 230 |
Frequency (Max) (MHz) | 400 | Frequency (Min) (MHz) | 1.8 |
Frequency (Min-Max) (GHz) | 0.0018000001 to 0.4 | f<sub>range</sub> [max] (MHz) | 400 |
f<sub>range</sub> [min] (MHz) | 1.8 | Rth(j-a) (K/W) | 0.09 |
Matching | unmatched | Modes of Operation | pulsed radio frequency signal |
Package/Case | NI-1230H-4 |
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