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MRFX1K80HR5 +BOM

Trans RF MOSFET N-CH 179V 5-Pin NI-1230H T/R

MRFX1K80HR5 Information

Description

The MRFX1K80HR5 is a LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor from NXP Semiconductors, specifically designed for RF (Radio Frequency) applications. It has a voltage rating of 193V and is packaged in the NI1230H-4 package type. This transistor is suitable for use in high-power RF amplifiers, transmitters, and receivers, where its high power handling capability and low distortion characteristics are beneficial. The MRFX1K80HR5 is likely used in a variety of applications such as wireless communication systems, radar systems, and satellite communications. In summary, the MRFX1K80HR5 is a high-power RF transistor designed for demanding RF amplifier and transmitter applications, offering high reliability and performance.

Features

Based on the provided information, I can tell you that the MRFX1K80HR5 is an LDMOS transistor from NXP Semiconductors. It has a package type of NI1230H-4.

As for its features, here are some key points:

  • The transistor operates at a voltage of 193V.
  • It's designed for RF applications.
  • The exact specifications and characteristics of the device may vary depending on the manufacturer's documentation or datasheet.

Package

The package type of MRFX1K80HR5 is NI1230H-4.

Manufacturer

The manufacturer of the MRFX1K80HR5 is NXP Semiconductors. NXP Semiconductors is a leading semiconductor company that specializes in designing, manufacturing, and marketing semiconductors for various industries such as automotive, industrial, consumer, and more. They are known for their expertise in areas like secure communication, sensing, and power management.

Applications

Based on the product information, I can tell you that the application area for MRFX1K80HR5 is likely related to RF (Radio Frequency) applications, specifically in LDMOS transistor-based systems. This could include wireless communication systems, such as cellular networks, satellite communications, or radar systems.

Specifications

f<sub>i(RF)</sub> [max] (MHz) 400 Number of pins 4
Amp Class AB Test Signal Pulse
Supply Voltage (Typ) (V) 65 Class AB
Die Technology LDMOS Thermal Resistance (Spec) (&#8451;/W) 0.09
P1dB (Typ) (dBm) 62.6 Security Status COMPANY PUBLIC
Frequency (Min-Max) (MHz) 1.8,400 Efficiency (Typ) (%) 75.1
Frequency Band (Hz) 1800000,400000000 Description Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
f<sub>i(RF)</sub> [min] (MHz) 1.8 P1dB (Typ) (W) 1800
Gain (Typ) (dB) 25.1 Power Gain (Typ) (dB) @ f (MHz) 25.1 @ 230
Frequency (Max) (MHz) 400 Frequency (Min) (MHz) 1.8
Frequency (Min-Max) (GHz) 0.0018000001 to 0.4 f<sub>range</sub> [max] (MHz) 400
f<sub>range</sub> [min] (MHz) 1.8 Rth(j-a) (K/W) 0.09
Matching unmatched Modes of Operation pulsed radio frequency signal
Package/Case NI-1230H-4

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Ratings and Reviews

More
C
C**n 06/17/2024

thn you I'm very satisfied

19
L
L**n 08/01/2023

The goods came whole. I haven't checked yet. Thank you to the seller.

7
C
C**e 05/18/2023

Hello.I got the goods all right.Thank you.Very fast.

5
O
O**a 04/24/2023

Delivery from the moment of payment to the post office-19 days.One solder-works fine!Not the first time i order from this seller-always everything is fine ..5.

1

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MRFX1K80HR5 Datasheet PDF

Preliminary Specification MRFX1K80HR5 PDF Download

MRFX1K80HR5 PDF Preview

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