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MRF6V4300NBR5 +BOM

MRF6V4300NBR5 RF Power Field-Effect Transistor

Manufacturer:

NXP Semiconductors
Mfr.Part #:

MRF6V4300NBR5
Datasheet:

MRF6V4300NBR5 Datasheet (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Vds - Drain-Source Breakdown Voltage:

110 V
Operating Frequency:

600 MHz
EDA/CAD Models:

Request Free CAD Models for MRF6V4300NBR5

MRF6V4300NBR5 Information

General Description

The MRF6V4300NBR5 is a high-power RF transistor designed for use in industrial, scientific, and medical (ISM) applications, specifically in the UHF frequency range. Manufactured by NXP Semiconductors, it operates in the 400-470 MHz frequency band and is commonly utilized in equipment such as RF power amplifiers, transmitters, and wireless infrastructure.This transistor offers high power gain, typically around 18 dB, with a maximum output power of up to 300 watts. It boasts excellent linearity, making it suitable for applications where signal integrity is critical. The device is built using advanced silicon MOSFET technology, ensuring high reliability and performance consistency over a wide range of operating conditions.The MRF6V4300NBR5 is housed in a rugged, thermally-enhanced package designed for efficient heat dissipation, allowing it to handle high-power operation with minimal thermal resistance. Its robust construction makes it suitable for demanding environments and ensures long-term reliability in mission-critical systems.With its combination of high power output, excellent linearity, and reliability, the MRF6V4300NBR5 serves as a key component in RF power amplification systems across various industries, facilitating the transmission of high-quality signals over long distances in applications such as wireless communication, radar systems, and broadcast transmitters

Key Features

The MRF6V4300NBR5 is a high-frequency, RF power field-effect transistor designed for broadband commercial and industrial applications

It operates in the 400 to 2700 MHz frequency range with a power output up to 60 watts

It features excellent thermal stability, high gain, and low distortion, making it suitable for various RF amplification tasks

Application

The MRF6V4300NBR5 is commonly used in high-power RF amplifier applications, particularly in the industrial, scientific, and medical (ISM) band

It's suitable for applications such as MRI systems, plasma generators, RF heating, and industrial automation

This transistor offers high efficiency, power gain, and reliability, making it ideal for demanding RF power amplifier requirements in various fields

Specifications

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Vds - Drain-Source Breakdown Voltage	110 V
Operating Frequency	600 MHz	Gain	22 dB
Output Power	300 W	Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT	Configuration	Single
Moisture Sensitive	Yes	Product Type	RF MOSFET Transistors
Factory Pack Quantity	50	Subcategory	MOSFETs
Type	RF Power MOSFET	Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	2.4 V	Part # Aliases	935317035578
Unit Weight	0.067412 oz	Package/Case	TO-270-4