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See Technical Specifications

MRF6522-70 +BOM

High-gain RF amplifier MOSFET transistor for efficient signal processing.

Manufacturer:

NXP Semiconductors
Mfr.Part #:

MRF6522-70
Datasheet:

MRF6522-70 Datasheet (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

7 A
Vds - Drain-Source Breakdown Voltage:

65 V

MRF6522-70 Information

Avaq Semiconductor offers the highly versatile and reliable MRF6522-70 driver, produced by NXP Semiconductors. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the MRF6522-70.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	7 A
Vds - Drain-Source Breakdown Voltage	65 V	Operating Frequency	940 MHz
Gain	16 dB	Output Power	80 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement	Configuration	Single
Height	5.21 mm	Length	27.3 mm
Pd - Power Dissipation	159 W	Product Type	RF MOSFET Transistors
Subcategory	MOSFETs	Type	RF Power MOSFET
Vgs - Gate-Source Voltage	20 V	Vgs th - Gate-Source Threshold Voltage	4 V
Width	9.91 mm	Package/Case	NI-600-3