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MRF586 +BOM
RF Bipolar Transistors RF Transistor
CAN-3-
Manufacturer:
-
Mfr.Part #:
MRF586
-
Datasheet:
-
Transistor Type:
NPN
-
Voltage - Collector Emitter Breakdown (Max):
17V
-
Frequency - Transition:
3GHz
-
Gain:
13.5dB
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Availability: 6357 PCS
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MRF586 Information
Description
The MRF586 is a RF Bipolar Transistor from Microsemi Corporation, designed for various applications that require high-quality amplifier stages or switches in rf circuits. The transistor is packaged in either TO-205AD or TO-39-3 Metal Can types. This product offers reliable performance in frequencies up to several GHz, and its parameters enable it to operate with moderate power levels. The MRF586's specifications make it suitable for use in satellite communications, radio frequency amplifiers, microwave systems, and other high-frequency applications where stability, low noise figure, and high current-handling capabilities are essential. In summary, the MRF586 is a RF bipolar transistor that provides excellent performance characteristics, making it useful for diverse rf circuit applications.
Package
The package type of MRF586 is TO-205AD, TO-39-3 Metal Can.
Pinout
According to Microsemi Corporation's documentation, the MRF586 is a RF Bipolar Transistor with a TO-205AD or TO-39-3 Metal Can package.
The pin count for the MRF586 is 5:
- Pin 1: Base
- Pin 2: Collector
- Pin 3: Emitter
- Pin 4: Collector (same as Pin 2)
- Pin 5: Not Connected
Please note that this information is based on my training data and may not be accurate or up-to-date. For the most current and reliable information, I recommend consulting Microsemi Corporation's official documentation or contacting their customer support directly.
Manufacturer
The manufacturer of the MRF586 is Microsemi Corporation, a leading provider of semiconductor solutions.
Equivalent
The equivalent products of MRF586 are:
- NXP BFR86
- STP16PFV
- Philips BC856B
- Toshiba 2SC1815
- ON Semi 2N3906
Please note that the exact equivalent may vary depending on specific application and requirements.
Specifications
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors | Series | - |
Transistor Type | NPN | Voltage - Collector Emitter Breakdown (Max) | 17V |
Frequency - Transition | 3GHz | Noise Figure (dB Typ @ f) | - |
Gain | 13.5dB | Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V | Current - Collector (Ic) (Max) | 200mA |
Operating Temperature | - | Mounting Type | Through Hole |
Pin Count | 3 | Released Date | Feb 10, 2021 |
Last Modified Date | Mar 7, 2023 4:10 PM UTC | Package/Case | CAN-3 |
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In Stock: 6,357
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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